Improvement of Electrical Properties of Hg_{1-x}Zn_{x}Se upon Doping with Fe

• Authors: W. Dobrowolski , E. Grodzicka , J. Kossut , B. Witkowska
• Languages of publication: EN

Abstracts

EN

Results of measurements of electron concentration and mobility in mixed crystals of Hg_{1-x}Zn_{x}Se (0 ≤ x ≤ 0.07) doped with resonant Fe donors (0 ≤ n_{Fe} ≤ 5 × 10^{19} cm^{-3}) at liquid helium temperatures are presented. The data show that there is a considerable improvement of the electrical properties of the material when Fe impurities are present. The analysis of the mobility in terms of the scattering from ionized centers (accounting for possible spatial correlation of impurity charges) and the alloy scattering is in agreement with the measured data.

Keywords

EN

72.80.Ey; 72.20.Fr; 71.55.Fr

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 72.20.Fr: Low-field transport and mobility; piezoresistance

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 681-684

Dates

published

1992-10

Contributors

author

W. Dobrowolski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

E. Grodzicka

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Kossut

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

B. Witkowska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.681