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1992 | 82 | 4 | 681-684
Article title

Improvement of Electrical Properties of Hg_{1-x}Zn_{x}Se upon Doping with Fe

Content
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Languages of publication
EN
Abstracts
EN
Results of measurements of electron concentration and mobility in mixed crystals of Hg_{1-x}Zn_{x}Se (0 ≤ x ≤ 0.07) doped with resonant Fe donors (0 ≤ n_{Fe} ≤ 5 × 10^{19} cm^{-3}) at liquid helium temperatures are presented. The data show that there is a considerable improvement of the electrical properties of the material when Fe impurities are present. The analysis of the mobility in terms of the scattering from ionized centers (accounting for possible spatial correlation of impurity charges) and the alloy scattering is in agreement with the measured data.
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EN
Publisher

Year
Volume
82
Issue
4
Pages
681-684
Physical description
Dates
published
1992-10
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z427kz
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