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1992 | 82 | 4 | 677-680
Article title

Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon

Content
Title variants
Languages of publication
EN
Abstracts
EN
A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.
Keywords
EN
Year
Volume
82
Issue
4
Pages
677-680
Physical description
Dates
published
1992-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z426kz
Identifiers
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