III-V Semiconducting Nitrides Energy Gap under Pressure

• Authors: P. Perlin , I. Gorczyca , H. Teisseyre , T. Suski , E. Litwin-Staszewska , S. Porowski , I. Grzegory , N. Christensen
• Languages of publication: EN

Abstracts

EN

In this paper we present overview of our recent experimental and theoretical results concerning electronic band structure of III-V nitrides under pressure. It is shown here that the pressure coefficients of the direct gap for studied nitrides are surprisingly small. To describe tendency in changes of the gap with pressure we use a simple empirical relation.

Keywords

EN

71.25.Tn

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 674-676

Dates

published

1992-10

Contributors

author

P. Perlin

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

I. Gorczyca

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

H. Teisseyre

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

T. Suski

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

E. Litwin-Staszewska

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

S. Porowski

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

I. Grzegory

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

N. Christensen

• Institute of Physics, Aarhus University, 8000 Aarhus, Denmark

Identifiers

DOI

10.12693/APhysPolA.82.674