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1992 | 82 | 4 | 674-676
Article title

III-V Semiconducting Nitrides Energy Gap under Pressure

Content
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Languages of publication
EN
Abstracts
EN
In this paper we present overview of our recent experimental and theoretical results concerning electronic band structure of III-V nitrides under pressure. It is shown here that the pressure coefficients of the direct gap for studied nitrides are surprisingly small. To describe tendency in changes of the gap with pressure we use a simple empirical relation.
Keywords
EN
Publisher

Year
Volume
82
Issue
4
Pages
674-676
Physical description
Dates
published
1992-10
Contributors
author
  • High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland
  • High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland
  • Institute of Physics, Aarhus University, 8000 Aarhus, Denmark
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z425kz
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