PL EN


Preferences help
enabled [disable] Abstract
Number of results
1992 | 82 | 4 | 664-669
Article title

A New Type of Semi-Insulating Materials

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
The introduction of Cu in InP at 700°C and higher temperatures results in both initially p-type and n-type InP become semi-insulating. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. The buried Schottky barrier model is the only model thus far studied which is consistent with these experimental observations. This model has general applicability, and its possible relevance to other semiconductors is examined. The conditions necessary for forming quasi-intrinsic semiconductors by metallic precipitation are discussed.
Keywords
EN
Publisher

Year
Volume
82
Issue
4
Pages
664-669
Physical description
Dates
published
1992-10
Contributors
author
  • Department of Materials Science, University of California, Berkeley, CA 94720, USA
  • Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, USA
author
  • Department of Materials Science, University of California, Berkeley, CA 94720, USA
  • Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z423kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.