Carrier Collection into InGaAs/GaAs Quantum Well: Role of Surface Band Bending

• Authors: G. Ambrazevičius , S. Marcinkevičius , T. Lideikis , K. Naudžius
• Languages of publication: EN

Abstracts

EN

Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs quantum wells located at different distances from a surface have been studied at 2 K. The influence of surface band bending on carrier transfer into a quantum well is demonstrated. Oscillations due to relaxation of photo-excited carriers in GaAs barrier have been observed in the quantum well photoluminescence excitation spectra.

Keywords

EN

72.80.Ey; 73.50.Gr

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 73.50.Gr: Charge carriers: generation, recombination, lifetime, trapping, mean free paths

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 660-663

Dates

published

1992-10

Contributors

author

G. Ambrazevičius

• Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania

author

S. Marcinkevičius

• Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania

author

T. Lideikis

• Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania

author

K. Naudžius

• Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania

Identifiers

DOI

10.12693/APhysPolA.82.660