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1992 | 82 | 4 | 660-663
Article title

Carrier Collection into InGaAs/GaAs Quantum Well: Role of Surface Band Bending

Content
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Languages of publication
EN
Abstracts
EN
Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs quantum wells located at different distances from a surface have been studied at 2 K. The influence of surface band bending on carrier transfer into a quantum well is demonstrated. Oscillations due to relaxation of photo-excited carriers in GaAs barrier have been observed in the quantum well photoluminescence excitation spectra.
Keywords
EN
Publisher

Year
Volume
82
Issue
4
Pages
660-663
Physical description
Dates
published
1992-10
Contributors
  • Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania
  • Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Goštauto 11, 2600 Vilnius, Lithuania
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z422kz
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