Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
We present a bistability of low temperature photoluminescence in a n-i-n type-II GaAs/AlAs quantum heterostructure. Spectral analysis and electrical measurements indicate that the two states correspond to hole accumulation in different layers. The transition occurs with the alignment of electronic Γ and X states due to optical pumping, and no external voltage bias is needed.
Discipline
- 78.55.Cr: III-V semiconductors
- 42.65.Pc: Optical bistability, multistability, and switching, including local field effects(see also 42.60.Gd Q-switching; 42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks)
- 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
Journal
Year
Volume
Issue
Pages
656-659
Physical description
Dates
published
1992-10
Contributors
author
- Laboratoire de Microstructures et Microélectronique-CNRS, 196, av. H. Ravera, 92220 Bagneux, France
author
- Laboratoire de Microstructures et Microélectronique-CNRS, 196, av. H. Ravera, 92220 Bagneux, France
author
- Laboratoire de Microstructures et Microélectronique-CNRS, 196, av. H. Ravera, 92220 Bagneux, France
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z421kz