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1992 | 82 | 4 | 656-659
Article title

Optical Bistability Due to Photo-Induced Charge Transfer in a Type-II GaAs/AlAs Quantum Well

Content
Title variants
Languages of publication
EN
Abstracts
EN
We present a bistability of low temperature photoluminescence in a n-i-n type-II GaAs/AlAs quantum heterostructure. Spectral analysis and electrical measurements indicate that the two states correspond to hole accumulation in different layers. The transition occurs with the alignment of electronic Γ and X states due to optical pumping, and no external voltage bias is needed.
Keywords
EN
Year
Volume
82
Issue
4
Pages
656-659
Physical description
Dates
published
1992-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z421kz
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