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1992 | 82 | 4 | 656-659
Article title

Optical Bistability Due to Photo-Induced Charge Transfer in a Type-II GaAs/AlAs Quantum Well

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EN
Abstracts
EN
We present a bistability of low temperature photoluminescence in a n-i-n type-II GaAs/AlAs quantum heterostructure. Spectral analysis and electrical measurements indicate that the two states correspond to hole accumulation in different layers. The transition occurs with the alignment of electronic Γ and X states due to optical pumping, and no external voltage bias is needed.
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Contributors
author
  • Laboratoire de Microstructures et Microélectronique-CNRS, 196, av. H. Ravera, 92220 Bagneux, France
author
  • Laboratoire de Microstructures et Microélectronique-CNRS, 196, av. H. Ravera, 92220 Bagneux, France
author
  • Laboratoire de Microstructures et Microélectronique-CNRS, 196, av. H. Ravera, 92220 Bagneux, France
References
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bwmeta1.element.bwnjournal-article-appv82z421kz
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