PL EN


Preferences help
enabled [disable] Abstract
Number of results
1992 | 82 | 4 | 645-648
Article title

Monte Carlo Simulations of Spatial Correlations of Charged Centers in δ-Doped Layers

Content
Title variants
Languages of publication
EN
Abstracts
EN
Results of Monte Carlo simulations of a 2D system of charged donors are presented. They enable to study the effects related to a spatial correlation of donor charges located on a random donor matrix. A qualitative difference between DX^{+} and DX¯ models is observed. In the first case, strong temperature dependence of the correlations and a "freezing-like" behaviour is found. The origin of the freezing is traced to the random distribution of donor sites by comparing the system with a liquid-like model where the charges may assume arbitrary positions within a plane. In the second case only nearest-neighbour correlations are observed. The simulations have direct application in analysis of the behaviour of the DX centers in the GaAs planarly doped with Si.
Keywords
EN
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z418kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.