Monte Carlo Simulations of Spatial Correlations of Charged Centers in δ-Doped Layers

• Authors: P. Sobkowicz , Z. Wilamowski , J. Kossut
• Languages of publication: EN

Abstracts

EN

Results of Monte Carlo simulations of a 2D system of charged donors are presented. They enable to study the effects related to a spatial correlation of donor charges located on a random donor matrix. A qualitative difference between DX^{+} and DX¯ models is observed. In the first case, strong temperature dependence of the correlations and a "freezing-like" behaviour is found. The origin of the freezing is traced to the random distribution of donor sites by comparing the system with a liquid-like model where the charges may assume arbitrary positions within a plane. In the second case only nearest-neighbour correlations are observed. The simulations have direct application in analysis of the behaviour of the DX centers in the GaAs planarly doped with Si.

Keywords

EN

71.55.Eq; 73.20.Dx; 71.45.Gm

Discipline

• 71.55.Eq: III-V semiconductors
• 71.45.Gm: Exchange, correlation, dielectric and magnetic response functions, plasmons

• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 645-648

Dates

published

1992-10

Contributors

author

P. Sobkowicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

Z. Wilamowski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Kossut

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.645