Hot Carrier Effects in Optically Detected Cyclotron Resonance Studies of III-V Semiconductors

• Authors: K. Karpińska , S. Dedulewicz , M. Godlewski
• Languages of publication: EN

Abstracts

EN

The mechanisms of irregular photoluminescence intensity oscillations, as observed in optically detected cyclotron resonance experiments, are discussed. Two possible scenarios are analyzed, both requiring impact ionization of the center(s) by electric field accelerated free carriers. The first assumes coexistence of dielectric and energy relaxation processes. The second assumes a subsequent impact ionization of two different centers.

Keywords

EN

71.35.+z; 72.70.+m; 76.90.+d

Discipline

• 72.70.+m: Noise processes and phenomena
• 76.90.+d: Other topics in magnetic resonances and relaxations (restricted to new topics in section 76)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 623-626

Dates

published

1992-10

Contributors

author

K. Karpińska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

S. Dedulewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.82.623