PL EN


Preferences help
enabled [disable] Abstract
Number of results
1992 | 82 | 4 | 623-626
Article title

Hot Carrier Effects in Optically Detected Cyclotron Resonance Studies of III-V Semiconductors

Content
Title variants
Languages of publication
EN
Abstracts
EN
The mechanisms of irregular photoluminescence intensity oscillations, as observed in optically detected cyclotron resonance experiments, are discussed. Two possible scenarios are analyzed, both requiring impact ionization of the center(s) by electric field accelerated free carriers. The first assumes coexistence of dielectric and energy relaxation processes. The second assumes a subsequent impact ionization of two different centers.
Keywords
EN
Year
Volume
82
Issue
4
Pages
623-626
Physical description
Dates
published
1992-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z412kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.