The Symmetry of the EL2 Defect in the Metastable State
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We measured recovery of the optical absorption of EL2 under  and  uniaxial stress during heating of the crystal. The recovery step, occurring at about 45 K in n-type GaAs, splits into two components under  stress, and no splitting is observed under  stress. The same behavior under uniaxial stress shows the recovery occurring at 125 K in semi-insulating GaAs. A fraction of centers recovering at lower temperature can be altered by excitation of metastability with polarized light or by excitation under stress. These results indicate that EL2 in the metastable state is trigonally distorted from the tetrahedral symmetry of the ground state.
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