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Number of results
1992 | 82 | 4 | 585-598

Article title

Hydrogen Passivation in Semiconductors

Authors

Content

Title variants

Languages of publication

EN

Abstracts

EN
A survey is presented of the structure, stability, and reorientation kinetics of acceptor-H and donor-H complexes in Si and III-V semiconductors. A few examples of the unintentional introduction of H into device materials are also discussed.

Keywords

EN

Year

Volume

82

Issue

4

Pages

585-598

Physical description

Dates

published
1992-10

Contributors

author
  • Physics Department and the Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015, USA

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv82z406kz
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