Surface Electronooptical Effects Connected with Gallium Doping of Cd_{0.85}Mn_{0.15}Te

• Authors: S. Kuźmiński , K. Pater , A. Szaynok
• Languages of publication: EN

Abstracts

EN

Surface photovoltage measurements performed for the Cd_{0.85}Mn_{0.15}Te single crystal samples intrinsic and gallium doped have shown influence of gallium doping on height and sign of the surface voltage barrier. From results of the surface photovoltage spectroscopy (SPS) measurements thevalues of acceptor, donor and manganese states energies have been determined. The photoconductivity (PC) measurements confirmed the effects found on the SPS curves.

Keywords

EN

73.20.-r; 73.20.At

Discipline

• 73.20.-r: Electron states at surfaces and interfaces
• 73.20.At: Surface states, band structure, electron density of states

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 81
• Issue: 2
• Pages: 309-313

Dates

published

1992-02

received

1991-05-24

(unknown)

1991-07-15

Contributors

author

S. Kuźmiński

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

K. Pater

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

A. Szaynok

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Identifiers

DOI

10.12693/APhysPolA.81.309