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1992 | 81 | 2 | 303-308
Article title

Analysis of Charge Versus the Surface Fermi Level Position at Silicon Surface

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Languages of publication
EN
Abstracts
EN
The surface charge Q_{sc} versus the surface Fermi level position Φ_{s} for real (111) surfaces of p- and n-type Si has been studied. The values of Q_{sc} have been obtained on the basis of measurements of the surface potential V_{s} by means of the surface photo voltage method. The complementary character of Q_{sc}(Φ_{s}) dependences for the surfaces of p- and n-type Si supports the fact that the surface state distribution is not dependent on the type of bulk doping but on the surface preparation process.
Keywords
EN
Publisher

Year
Volume
81
Issue
2
Pages
303-308
Physical description
Dates
published
1992-02
received
1991-05-21
(unknown)
1991-07-15
Contributors
author
  • Institute of Physics, Silesian Technical University, Krzywoustego 2, 44-100 Gliwice, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv81z215kz
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