Analysis of Charge Versus the Surface Fermi Level Position at Silicon Surface

• Authors: B. Adamowicz
• Languages of publication: EN

Abstracts

EN

The surface charge Q_{sc} versus the surface Fermi level position Φ_{s} for real (111) surfaces of p- and n-type Si has been studied. The values of Q_{sc} have been obtained on the basis of measurements of the surface potential V_{s} by means of the surface photo voltage method. The complementary character of Q_{sc}(Φ_{s}) dependences for the surfaces of p- and n-type Si supports the fact that the surface state distribution is not dependent on the type of bulk doping but on the surface preparation process.

Keywords

EN

73.20.-r

Discipline

• 73.20.-r: Electron states at surfaces and interfaces

• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 81
• Issue: 2
• Pages: 303-308

Dates

published

1992-02

received

1991-05-21

(unknown)

1991-07-15

Contributors

author

B. Adamowicz

• Institute of Physics, Silesian Technical University, Krzywoustego 2, 44-100 Gliwice, Poland

Identifiers

DOI

10.12693/APhysPolA.81.303