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1992 | 81 | 2 | 239-245
Article title

RHEED Intensity Oscillations During the Growth of Indium Ultrathin Films

Content
Title variants
Languages of publication
EN
Abstracts
EN
The ultrathin high-purity single-crystal indium films with atomically flat surfaces, and precisely known thicknesses in UHV conditions were prepared These films were deposited on the Si(111)-(7×7) and Si(111)-(6×6)Au substrate cooled to temperatures up to 110 K. The growth of the indium films was studied by. reflection high-energy electron diffraction (RHEED). Pronounced specular beam intensity oscillations are found. The consequences for the understanding of RHEED intensity oscillations and of the growth of ultrathin films are discussed. The amplitude of the RHEED specular beam intensity oscillations as a function f the polar angle and temperature substrate Si was measured.
Keywords
EN
Year
Volume
81
Issue
2
Pages
239-245
Physical description
Dates
published
1992-02
received
1991-05-21
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv81z208kz
Identifiers
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