RHEED Intensity Oscillations During the Growth of Indium Ultrathin Films

• Authors: M. Stróżak , M. Jałochowski , M. Subotowicz
• Languages of publication: EN

Abstracts

EN

The ultrathin high-purity single-crystal indium films with atomically flat surfaces, and precisely known thicknesses in UHV conditions were prepared These films were deposited on the Si(111)-(7×7) and Si(111)-(6×6)Au substrate cooled to temperatures up to 110 K. The growth of the indium films was studied by. reflection high-energy electron diffraction (RHEED). Pronounced specular beam intensity oscillations are found. The consequences for the understanding of RHEED intensity oscillations and of the growth of ultrathin films are discussed. The amplitude of the RHEED specular beam intensity oscillations as a function f the polar angle and temperature substrate Si was measured.

Keywords

EN

61.14.-x; 68.55.-a

Discipline

• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 81
• Issue: 2
• Pages: 239-245

Dates

published

1992-02

received

1991-05-21

Contributors

author

M. Stróżak

• Department of Experimental Physics, Institute of Physics, Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

M. Jałochowski

• Department of Experimental Physics, Institute of Physics, Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

M. Subotowicz

• Department of Experimental Physics, Institute of Physics, Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

Identifiers

DOI

10.12693/APhysPolA.81.239