PL EN


Preferences help
enabled [disable] Abstract
Number of results
1991 | 80 | 6 | 811-817
Article title

X-ray Standing Wave Studies of Si (111) Crystal Implanted by Fe and Ni Ions

Content
Title variants
Languages of publication
EN
Abstracts
EN
The X-Ray Standing Wave Method (XRSW) was applied for the investigation of the silicon samples implanted with 80 keV Fe and Ni ions. The samples were measured by the XRSW method before and after annealing process. For theoretical calculations the two layer model was used. The analysis revealed that after annealing only a slight amount (~20÷30%) of the implanted atoms occupy the position of the Si crystal planes. The Rutherford backscattering (RBS) experiment that confirms the results obtained by the XRSW method was performed.
Keywords
EN
Publisher

Year
Volume
80
Issue
6
Pages
811-817
Physical description
Dates
published
1991-12
received
1991-08-08
(unknown)
1991-11-08
Contributors
  • Institute of Crystallography, Academy of Sciences of USSR, 117333, Moscow, Leninsky Prospect 59, USSR
author
  • Institute of Crystallography, Academy of Sciences of USSR, 117333, Moscow, Leninsky Prospect 59, USSR
author
  • Institute of Crystallography, Academy of Sciences of USSR, 117333, Moscow, Leninsky Prospect 59, USSR
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z606kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.