Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering

• Authors: W. Bala , M. Drozdowski , M. Kozielski
• Languages of publication: EN

Abstracts

EN

Investigations of the strains at the n-ZnSe epilayers grown on GaAs substrate using polarized Raman spectra are presented. It has been shown that Raman scattering experiment can be used as a method for investigation of the splitting between the heavy- and light-hole bands in n-ZnSe thin films.

Keywords

EN

78.30.Hv; 61.70.Wp

Discipline

• 78.30.Hv: Other nonmetallic inorganics

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 5
• Pages: 723-730

Dates

published

1991-11

received

1991-03-21

received

1991-07-02

Contributors

author

W. Bala

• Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

author

M. Drozdowski

• Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland

author

M. Kozielski

• Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland

Identifiers

DOI

10.12693/APhysPolA.80.723