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1991 | 80 | 5 | 723-730
Article title

Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering

Content
Title variants
Languages of publication
EN
Abstracts
EN
Investigations of the strains at the n-ZnSe epilayers grown on GaAs substrate using polarized Raman spectra are presented. It has been shown that Raman scattering experiment can be used as a method for investigation of the splitting between the heavy- and light-hole bands in n-ZnSe thin films.
Keywords
EN
Publisher

Year
Volume
80
Issue
5
Pages
723-730
Physical description
Dates
published
1991-11
received
1991-03-21
received
1991-07-02
Contributors
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland
author
  • Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland
author
  • Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z510kz
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