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1991 | 80 | 3 | 413-416

Article title

FFirst TSC and DLTS Measurements of Low Temperature GaAs

Content

Title variants

Languages of publication

EN

Abstracts

EN
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.

Keywords

EN

Year

Volume

80

Issue

3

Pages

413-416

Physical description

Dates

published
1991-09

Contributors

author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-688 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-688 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • University of California, Berkley, CA94720, USA

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv80z326kz
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