FFirst TSC and DLTS Measurements of Low Temperature GaAs

• Authors: J. Muszalski , A. Babiński , K. Korona , E. Kamińska , A. Piotrowska , M. Kamińska , E. Weber
• Languages of publication: EN

Abstracts

EN

The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.

Keywords

EN

71.55.-i; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 3
• Pages: 413-416

Dates

published

1991-09

Contributors

author

J. Muszalski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

A. Babiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

E. Kamińska

• Institute of Electron Technology, Al. Lotników 32/46, 02-688 Warszawa, Poland

author

A. Piotrowska

• Institute of Electron Technology, Al. Lotników 32/46, 02-688 Warszawa, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

E. Weber

• University of California, Berkley, CA94720, USA

Identifiers

DOI

10.12693/APhysPolA.80.413