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1991 | 80 | 3 | 413-416
Article title

FFirst TSC and DLTS Measurements of Low Temperature GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
Keywords
EN
Year
Volume
80
Issue
3
Pages
413-416
Physical description
Dates
published
1991-09
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z326kz
Identifiers
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