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1991 | 80 | 3 | 397-400
Article title

New DX-Related Photoinduced Absorption in AlGaAs:Te

Content
Title variants
Languages of publication
EN
Abstracts
EN
Absorption measurements on thick AlGaAs:Te layers reveal a new absorption band at ca. 0.55 eV. Also the absorption coefficient of the DX-center ground state was measured directly for the first time.
Keywords
EN
Year
Volume
80
Issue
3
Pages
397-400
Physical description
Dates
published
1991-09
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z322kz
Identifiers
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