Recombination Processes in ZnSe:Eu

Świątek, K.; Godlewski, M.

doi:10.12693/APhysPolA.80.381

Journal

Acta Physica Polonica A

1991 | 80 | 3 | 381-384

Article title

Recombination Processes in ZnSe:Eu

Authors

K. Świątek , M. Godlewski

Content

Full texts:

http://przyrbwn.icm.edu.pl/APP/PDF/80/a080z3p18.pdf [remote]

Title variants

Languages of publication

Abstracts

The photo-ESR and photoluminescence experiments have been performed on high-resistivity ZnSe:Eu crystals. We report the first evidence that the energy level of Eu^{2+} ground state is located within the ZnSe forbidden gap, approximately 2.1 eV below the bottom of the conduction band.

Keywords

71.55.Gs 76.30.Kg 78.50.Ge

Discipline

Publisher

Journal

Acta Physica Polonica A

Year

1991

Volume

Issue

Pages

381-384

Physical description

Dates

published

1991-09

Contributors

author

K. Świątek

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Godlewski

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

DOI

10.12693/APhysPolA.80.381

YADDA identifier

bwmeta1.element.bwnjournal-article-appv80z318kz