Recombination Processes in ZnSe:Eu

K. Świątek; M. Godlewski

doi:10.12693/APhysPolA.80.381

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Acta Physica Polonica A

1991 | 80 | 3 | 381-384

Article title

Recombination Processes in ZnSe:Eu

Authors

K. Świątek , M. Godlewski

Content

http://przyrbwn.icm.edu.pl/APP/PDF/80/a080z3p18.pdf [remote]

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Abstracts

The photo-ESR and photoluminescence experiments have been performed on high-resistivity ZnSe:Eu crystals. We report the first evidence that the energy level of Eu^{2+} ground state is located within the ZnSe forbidden gap, approximately 2.1 eV below the bottom of the conduction band.

Keywords

71.55.Gs 76.30.Kg 78.50.Ge

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1991

Volume

Issue

Pages

381-384

Physical description

Dates

published

1991-09

References

Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv80z318kz

Identifiers

DOI

10.12693/APhysPolA.80.381