Recombination Processes in ZnSe:Eu

• Authors: K. Świątek , M. Godlewski
• Languages of publication: EN

Abstracts

EN

The photo-ESR and photoluminescence experiments have been performed on high-resistivity ZnSe:Eu crystals. We report the first evidence that the energy level of Eu^{2+} ground state is located within the ZnSe forbidden gap, approximately 2.1 eV below the bottom of the conduction band.

Keywords

EN

71.55.Gs; 76.30.Kg; 78.50.Ge

Discipline

• 71.55.Gs: II-VI semiconductors
• 76.30.Kg: Rare-earth ions and impurities

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 3
• Pages: 381-384

Dates

published

1991-09

Contributors

author

K. Świątek

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.80.381