Recombination Processes in ZnSe:Eu

Świątek, K.; Godlewski, M.

doi:10.12693/APhysPolA.80.381

Journal

Acta Physica Polonica A

1991 | 80 | 3 | 381-384

Article title

Recombination Processes in ZnSe:Eu

Authors

K. Świątek , M. Godlewski

Content

Full texts:

http://przyrbwn.icm.edu.pl/APP/PDF/80/a080z3p18.pdf [remote]

Title variants

Languages of publication

Abstracts

The photo-ESR and photoluminescence experiments have been performed on high-resistivity ZnSe:Eu crystals. We report the first evidence that the energy level of Eu^{2+} ground state is located within the ZnSe forbidden gap, approximately 2.1 eV below the bottom of the conduction band.

Keywords

71.55.Gs 76.30.Kg 78.50.Ge

Discipline

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1991

Volume

Issue

Pages

381-384

Physical description

Dates

published

1991-09

Contributors

author

K. Świątek

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Godlewski

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

DOI

10.12693/APhysPolA.80.381

YADDA identifier

bwmeta1.element.bwnjournal-article-appv80z318kz