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1991 | 80 | 3 | 381-384
Article title

Recombination Processes in ZnSe:Eu

Content
Title variants
Languages of publication
EN
Abstracts
EN
The photo-ESR and photoluminescence experiments have been performed on high-resistivity ZnSe:Eu crystals. We report the first evidence that the energy level of Eu^{2+} ground state is located within the ZnSe forbidden gap, approximately 2.1 eV below the bottom of the conduction band.
Keywords
EN
Year
Volume
80
Issue
3
Pages
381-384
Physical description
Dates
published
1991-09
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z318kz
Identifiers
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