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1991 | 80 | 3 | 361-364
Article title

Shallow-Deep Instability of Donor States in Many-Valley Semiconductors

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EN
Abstracts
EN
The shallow-deep instability of double and single donors in multi-valley semi conductors using the model Hamiltonian is studied. The obtained results describe properly the properties of double donors (in D^{0} and D^{+} state) in Ge and single deep donors in Al_{x}Ga_{1-x}As for 0.3 < x < 0.5.
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EN
Publisher

Year
Volume
80
Issue
3
Pages
361-364
Physical description
Dates
published
1991-09
Contributors
author
  • Institute of Physics, N. Copernicus University, ul. Grudziądzka 5/7, 87-100 Toruń, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z313kz
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