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1991 | 80 | 3 | 357-360

Article title

Conduction Band Influence on the Properties of Bistable Donors

Content

Title variants

Languages of publication

EN

Abstracts

EN
A theoretical description of bistable donors in polar semiconductors is proposed. The donor states are described within the one-band approximation, which takes into account a finite width and nonparabolicity of the conduction band. The interaction between the defect and the crystal lattice is assumed in the Fröhlich form. For the bistable indium impurity in cadmium fluoride, a coexistence of strongly and weakly localized donor states has been obtained. The calculated energies for both the states and absorption band shape in the 3-eV range are in agreement with experiment.

Keywords

EN

Year

Volume

80

Issue

3

Pages

357-360

Physical description

Dates

published
1991-09

Contributors

author
  • Institute of Physics and Nuclear Techniques, Academy of Mining and Metallurgy, Al. Mickiewicza 30, 30-059 Kraków, Poland
author
  • Institute of Physics and Nuclear Techniques, Academy of Mining and Metallurgy, Al. Mickiewicza 30, 30-059 Kraków, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv80z312kz
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