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1991 | 80 | 3 | 357-360
Article title

Conduction Band Influence on the Properties of Bistable Donors

Content
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Languages of publication
EN
Abstracts
EN
A theoretical description of bistable donors in polar semiconductors is proposed. The donor states are described within the one-band approximation, which takes into account a finite width and nonparabolicity of the conduction band. The interaction between the defect and the crystal lattice is assumed in the Fröhlich form. For the bistable indium impurity in cadmium fluoride, a coexistence of strongly and weakly localized donor states has been obtained. The calculated energies for both the states and absorption band shape in the 3-eV range are in agreement with experiment.
Keywords
EN
Publisher

Year
Volume
80
Issue
3
Pages
357-360
Physical description
Dates
published
1991-09
Contributors
author
  • Institute of Physics and Nuclear Techniques, Academy of Mining and Metallurgy, Al. Mickiewicza 30, 30-059 Kraków, Poland
author
  • Institute of Physics and Nuclear Techniques, Academy of Mining and Metallurgy, Al. Mickiewicza 30, 30-059 Kraków, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z312kz
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