Native Defects in Gallium Arsenide Grown by Synthesis, Solute Diffusion Method

Fronc, K.; Mąkosa, A.; Wosiński, T.

doi:10.12693/APhysPolA.80.349

Journal

Acta Physica Polonica A

1991 | 80 | 3 | 349-352

Article title

Native Defects in Gallium Arsenide Grown by Synthesis, Solute Diffusion Method

Authors

K. Fronc , A. Mąkosa , T. Wosiński

Content

Full texts:

http://przyrbwn.icm.edu.pl/APP/PDF/80/a080z3p10.pdf [remote]

Title variants

Languages of publication

Abstracts

High-purity n-type GaAs crystal was grown by the Synthesis, Solute Diffusion (SSD) method. Deep Level Transient Spectroscopy (DLTS) characterization of the crystal revealed three deep traps related to native defects. Microscopic origin of the traps is discussed and prospective use of SSD-grown GaAs as a bulk material with the high luminescence efficiency is emphasized.

Keywords

61.70.-r 71.55.Eq

Discipline

71.55.Eq: III-V semiconductors

Publisher

Journal

Acta Physica Polonica A

Year

1991

Volume

Issue

Pages

349-352

Physical description

Dates

published

1991-09

Contributors

author

K. Fronc

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Mąkosa

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Wosiński

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

DOI

10.12693/APhysPolA.80.349

YADDA identifier

bwmeta1.element.bwnjournal-article-appv80z310kz