Native Defects in Gallium Arsenide Grown by Synthesis, Solute Diffusion Method

• Authors: K. Fronc , A. Mąkosa , T. Wosiński
• Languages of publication: EN

Abstracts

EN

High-purity n-type GaAs crystal was grown by the Synthesis, Solute Diffusion (SSD) method. Deep Level Transient Spectroscopy (DLTS) characterization of the crystal revealed three deep traps related to native defects. Microscopic origin of the traps is discussed and prospective use of SSD-grown GaAs as a bulk material with the high luminescence efficiency is emphasized.

Keywords

EN

61.70.-r; 71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 3
• Pages: 349-352

Dates

published

1991-09

Contributors

author

K. Fronc

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Mąkosa

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Wosiński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.80.349