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1991 | 80 | 3 | 349-352

Article title

Native Defects in Gallium Arsenide Grown by Synthesis, Solute Diffusion Method

Content

Title variants

Languages of publication

EN

Abstracts

EN
High-purity n-type GaAs crystal was grown by the Synthesis, Solute Diffusion (SSD) method. Deep Level Transient Spectroscopy (DLTS) characterization of the crystal revealed three deep traps related to native defects. Microscopic origin of the traps is discussed and prospective use of SSD-grown GaAs as a bulk material with the high luminescence efficiency is emphasized.

Keywords

EN

Year

Volume

80

Issue

3

Pages

349-352

Physical description

Dates

published
1991-09

Contributors

author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv80z310kz
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