PL EN


Preferences help
enabled [disable] Abstract
Number of results
1991 | 80 | 3 | 345-348
Article title

Thermal Donor Generation in Boron- and Aluminium-Doped Czochralski Silicon

Content
Title variants
Languages of publication
EN
Abstracts
EN
Generation of thermal donor centres in oxygen-rich silicon doped with boron and aluminium acceptors has been studied with the FTIR technique. It has been found that upon annealing 470°C two kinds of absorption series were generated. One of them belonged to the well-known first ionization level of silicon thermal (double) donors (TD's): TD°/TD^{+} . The second series was identified with the so-called shallow thermal donors (STD's). The generation kinetics of the two series was followed for both kinds of acceptor doping and significant differences has been found. The results of the FTIR investigations were further compared with the magnetic resonance findings allowing for their mutual correlation and more general conclusions.
Keywords
EN
Publisher

Year
Volume
80
Issue
3
Pages
345-348
Physical description
Dates
published
1991-09
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Van der Waals-Zeeman Laboratorium, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z309kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.