Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal

• Authors: A. Misiuk , J. Adamczewska , J. Bąk-Misiuk , J. Härtwig , A. Morawski , Z. Witczak
• Languages of publication: EN

Abstracts

EN

The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.

Keywords

EN

61.70.At; 61.70.-r; 81.40.-z

Discipline

• 81.40.-z: Treatment of materials and its effects on microstructure, nanostructure, and properties

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 3
• Pages: 317-320

Dates

published

1991-09

Contributors

author

A. Misiuk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Adamczewska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Bąk-Misiuk

• Institute of Physics, Polish Academy of Sciences, Warszawa, Poland

author

J. Härtwig

• Department of Physics, Jena University, Jena, Germany

author

A. Morawski

• High Pressure Research Centre, Polish Academy of Sciences, Warszawa, Poland

author

Z. Witczak

• High Pressure Research Centre, Polish Academy of Sciences, Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.80.317