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1991 | 80 | 3 | 317-320
Article title

Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal

Content
Title variants
Languages of publication
EN
Abstracts
EN
The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
Keywords
EN
Publisher

Year
Volume
80
Issue
3
Pages
317-320
Physical description
Dates
published
1991-09
Contributors
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, Warszawa, Poland
author
  • Department of Physics, Jena University, Jena, Germany
author
  • High Pressure Research Centre, Polish Academy of Sciences, Warszawa, Poland
author
  • High Pressure Research Centre, Polish Academy of Sciences, Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z302kz
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