Magnetophotoconductivity Due to Intra-Shallow-Donor Transitions in Semi-Insulating GaAs

• Authors: K. Karpierz , M. Sadowski , M. Grynberg
• Languages of publication: EN

Abstracts

EN

The paper concerns investigations of shallow centres in semi-insulating (SI) GaAs samples. A very sensitive measuring method - magnetophotoconductivity due to intra-shallow-donor transitions - was used. We report the behaviour of intra-impurity transitions as well as an additional structure in low magnetic fields for different far-infrared wavelengths (70.6 μm, 96.5 μm, 118.8 μm, 163 µm). The results are discussed in terms of a fluctuating potential from ionized centres in SI GaAs. The physical mechanism responsible for the low magnetic field structure is proposed.

Keywords

EN

72.40.+w; 78.20.Ls; 78.50.-w

Discipline

• 78.20.Ls: Magneto-optical effects(for magneto-optical devices, see 85.70.Sq)
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 2
• Pages: 291-294

Dates

published

1991-08

Contributors

author

K. Karpierz

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Sadowski

• High Pressure Research Centre UNIPRESS, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

M. Grynberg

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.80.291