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1991 | 80 | 2 | 291-294
Article title

Magnetophotoconductivity Due to Intra-Shallow-Donor Transitions in Semi-Insulating GaAs

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Languages of publication
EN
Abstracts
EN
The paper concerns investigations of shallow centres in semi-insulating (SI) GaAs samples. A very sensitive measuring method - magnetophotoconductivity due to intra-shallow-donor transitions - was used. We report the behaviour of intra-impurity transitions as well as an additional structure in low magnetic fields for different far-infrared wavelengths (70.6 μm, 96.5 μm, 118.8 μm, 163 µm). The results are discussed in terms of a fluctuating potential from ionized centres in SI GaAs. The physical mechanism responsible for the low magnetic field structure is proposed.
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EN
Publisher

Year
Volume
80
Issue
2
Pages
291-294
Physical description
Dates
published
1991-08
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • High Pressure Research Centre UNIPRESS, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z216kz
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