Photoconductivity in GaAlAs:Si Proves Negative U of DX Centers

• Authors: Z. Wilamowski , W. Jantsch , G. Ostermayer
• Languages of publication: EN

Abstracts

EN

The analysis of the temperature dependence of the photoconductivity, amplitude in doped GaAlAs, provides a simple and convincing proof of the negative sign of the Hubbard correlation energy U, strictly speaking of the two-electron nature of the thermal emission process from DX centers. The proof is based on a comparison of the emission activation energy measured per emission event (DLTS) with that measured per electron.

Keywords

EN

72.20.Jv; 71.55.-i

Discipline

• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 2
• Pages: 283-286

Dates

published

1991-08

Contributors

author

Z. Wilamowski

• Institute of Physics of the Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

W. Jantsch

• Institut für Experimentalphysik, Johannes-Kepler-Universität, 4040 Linz-Auhof, Austria

author

G. Ostermayer

• Institut für Experimentalphysik, Johannes-Kepler-Universität, 4040 Linz-Auhof, Austria

Identifiers

DOI

10.12693/APhysPolA.80.283