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1991 | 80 | 2 | 283-286
Article title

Photoconductivity in GaAlAs:Si Proves Negative U of DX Centers

Content
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Languages of publication
EN
Abstracts
EN
The analysis of the temperature dependence of the photoconductivity, amplitude in doped GaAlAs, provides a simple and convincing proof of the negative sign of the Hubbard correlation energy U, strictly speaking of the two-electron nature of the thermal emission process from DX centers. The proof is based on a comparison of the emission activation energy measured per emission event (DLTS) with that measured per electron.
Keywords
EN
Publisher

Year
Volume
80
Issue
2
Pages
283-286
Physical description
Dates
published
1991-08
Contributors
author
  • Institute of Physics of the Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institut für Experimentalphysik, Johannes-Kepler-Universität, 4040 Linz-Auhof, Austria
author
  • Institut für Experimentalphysik, Johannes-Kepler-Universität, 4040 Linz-Auhof, Austria
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z214kz
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