High Pressure Far-Infrared Magnetooptical Studies of Sn and S Donors in GaAs

• Authors: J. Dmochowski , P. Wang , R. Stradling
• Languages of publication: EN

Abstracts

EN

The diamond anvil cell technique is applied for magneto-optical far-infrared transmission experiments with LPE grown GaAs:Sn. The 1s-2p(+) intra-shallow-Γ-donor transition is investigated as a function of high hydrostatic pressure for Sn and residual S donors. Both donors are shallow up to 30 kbar. Above this pressure both donors become deep and shallow donor absorption is persistently bleached due to deep non-metastable (non DX-like) states of the donors entering the gap of GaAs.

Keywords

EN

71.55.Eq; 78.50.Ge

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 2
• Pages: 279-282

Dates

published

1991-08

Contributors

author

J. Dmochowski

• Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Al. Lotników 32/46, Poland
• Imperial College of Science, Technology and Medicine, Prince Consort Road, London, SW7 2BZ, UK

author

P. Wang

• Imperial College of Science, Technology and Medicine, Prince Consort Road, London, SW7 2BZ, UK

author

R. Stradling

• Imperial College of Science, Technology and Medicine, Prince Consort Road, London, SW7 2BZ, UK

Identifiers

DOI

10.12693/APhysPolA.80.279