PL EN


Preferences help
enabled [disable] Abstract
Number of results
1991 | 80 | 2 | 279-282
Article title

High Pressure Far-Infrared Magnetooptical Studies of Sn and S Donors in GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
The diamond anvil cell technique is applied for magneto-optical far-infrared transmission experiments with LPE grown GaAs:Sn. The 1s-2p(+) intra-shallow-Γ-donor transition is investigated as a function of high hydrostatic pressure for Sn and residual S donors. Both donors are shallow up to 30 kbar. Above this pressure both donors become deep and shallow donor absorption is persistently bleached due to deep non-metastable (non DX-like) states of the donors entering the gap of GaAs.
Keywords
EN
Publisher

Year
Volume
80
Issue
2
Pages
279-282
Physical description
Dates
published
1991-08
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Al. Lotników 32/46, Poland
  • Imperial College of Science, Technology and Medicine, Prince Consort Road, London, SW7 2BZ, UK
author
  • Imperial College of Science, Technology and Medicine, Prince Consort Road, London, SW7 2BZ, UK
author
  • Imperial College of Science, Technology and Medicine, Prince Consort Road, London, SW7 2BZ, UK
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z213kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.