Metal-Insulator Transition in Doped Semiconductors

• Authors: J. Jaroszyński
• Languages of publication: EN

Abstracts

EN

A survey is given of different kinds of metal-insulator transitions (MIT) in doped semiconductors. The role of electron-electron Coulomb interactions and of disorder is discussed vis-a-vis millikelvin experimental results for semimagnetic semiconductors (SMSC) in the vicinity of MIT. Critical behavior of conductivity tensor components and dielectric susceptibility at the magnetic field-induced MIT in p-type Hg_{1-x}Mn_{x}Te is compatible with the model in which the MIT is a result of quantum localization driven by disorder-modified electron-electron interactions. At the same time the critical behavior of the Hall coefficient suggests that, in addition to electrons forming the Fermi liquid (FL) and undergoing localization at the MIT, there is certain a concentration of local electron moments, even on the metallic side of the MIT. The formation of these moments can presumably be described in terms of a disordered Hubbard-Mott model.

Keywords

EN

71.30.+h

Discipline

• 71.30.+h: Metal-insulator transitions and other electronic transitions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 2
• Pages: 255-265

Dates

published

1991-08

Contributors

author

J. Jaroszyński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.80.255