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1991 | 80 | 2 | 255-265
Article title

Metal-Insulator Transition in Doped Semiconductors

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EN
Abstracts
EN
A survey is given of different kinds of metal-insulator transitions (MIT) in doped semiconductors. The role of electron-electron Coulomb interactions and of disorder is discussed vis-a-vis millikelvin experimental results for semimagnetic semiconductors (SMSC) in the vicinity of MIT. Critical behavior of conductivity tensor components and dielectric susceptibility at the magnetic field-induced MIT in p-type Hg_{1-x}Mn_{x}Te is compatible with the model in which the MIT is a result of quantum localization driven by disorder-modified electron-electron interactions. At the same time the critical behavior of the Hall coefficient suggests that, in addition to electrons forming the Fermi liquid (FL) and undergoing localization at the MIT, there is certain a concentration of local electron moments, even on the metallic side of the MIT. The formation of these moments can presumably be described in terms of a disordered Hubbard-Mott model.
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EN
Year
Volume
80
Issue
2
Pages
255-265
Physical description
Dates
published
1991-08
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z209kz
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