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1991 | 80 | 2 | 221-244
Article title

Pulsed Laser Evaporation and Epitaxy

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Languages of publication
EN
Abstracts
EN
The application of pulsed lasers for vaporization (ablation) of solid targets appears to be the most natural way to produce high purity fluxes of atoms/ions suitable for epitaxial growth of thin films. Since the early 1960's this unique approach has been the subject of steadily growing interest in the deposition of metals, dielectrics, semiconductors and since 1987, high-T_{c} superconductors. Laser induced target surface morphology changes, properties of laser induced vapours and pulsed deposition rate associated with the use of a pulsed laser for vacuum epitaxy are discussed. A pulsed laser evaporation and epitaxy (PLEE) system is described and the results of PLEE application for the growth of Cd_{1-x}Mn_{x}Te and CdTe-Cd_{1-x}Mn_{x}Te quantum well and superlattice structures are reviewed. Feasibility of PLEE in bandgap engineering is also discussed.
Keywords
EN
Year
Volume
80
Issue
2
Pages
221-244
Physical description
Dates
published
1991-08
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z207kz
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