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1991 | 80 | 2 | 149-160
Article title

DSL Photoetching: Principles and Application to Study Nature of Defects in III-V Materials

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Content
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Languages of publication
EN
Abstracts
EN
After a short general description of the chemical etching of semiconductors the mechanisms of defect-selective etching are described in detail. Two distinct mechanisms that lead to the formation of etch pits and etch hillocks on dislocations emerging at a semiconductor surface are discussed. The principles of the formation of defect-related etch features are described for the HF-CrO_{3}-H_{2}O etching system used for etching of GaAs. A model of surface reactions is presented and the influence of illumination during etching on the defect-selectivity is emphasized. The use of ultra sensitive photoetching to study the nature and origin of complex defects in SI and n-like GaAs is documented. In particular, the concept for the formation of dislocation cell structure in undoped GaAs is presented and the ability of photoetching to reveal the structural changes during annealing is visualized.
Keywords
EN
Publisher

Year
Volume
80
Issue
2
Pages
149-160
Physical description
Dates
published
1991-08
Contributors
author
  • MASPEC-C.N.R. Institute, Via Chiavari 18/A, 43100 Parma, Italy
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z201kz
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