Determination of Free Exciton Capture Cross Section of Si:Al by Photoluminescence

• Authors: G. Schramm
• Languages of publication: EN

Abstracts

EN

The free excitons capture rate and capture cross-section of the neutral Al atom in silicon were determined at 4.2 K. The obtained values are of the same order of magnitude as reported values of other shallow dopants.

Keywords

EN

78.55.-m

Discipline

• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 6
• Pages: 869-872

Dates

published

1991-06

received

1990-04-09

Contributors

author

G. Schramm

• VEB Spurenmetalle Freiberg-WlB im VEB Kombinat Mikroelektronik Erfurt, PSF 211, 9200 Freiberg, Germany

Identifiers

DOI

10.12693/APhysPolA.79.869