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1991 | 79 | 6 | 869-872
Article title

Determination of Free Exciton Capture Cross Section of Si:Al by Photoluminescence

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
The free excitons capture rate and capture cross-section of the neutral Al atom in silicon were determined at 4.2 K. The obtained values are of the same order of magnitude as reported values of other shallow dopants.
Keywords
EN
Publisher

Year
Volume
79
Issue
6
Pages
869-872
Physical description
Dates
published
1991-06
received
1990-04-09
Contributors
author
  • VEB Spurenmetalle Freiberg-WlB im VEB Kombinat Mikroelektronik Erfurt, PSF 211, 9200 Freiberg, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z611kz
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