MIS-Microstructure with Periodic Field Electrodes. A New Type of Dynamic Superlattice

• Authors: I.E. Trale
• Languages of publication: EN

Abstracts

EN

The electron movement in thin semiconductor layer adjoining interface semiconductor-insulator in metal-insulator-semiconductor (MIS) microstructure with periodic field electrodes is considered. If a voltage of some sufficiently high frequency is applied to such a structure the effect of this high frequency field on a charge carriers in semiconductor is equivalent, in a sense, to the effect of some time-independent effective potential which is a sequence of deep "dynamic" quantum wells, where the charge carriers are localized. It is shown that the electron resonant tunneling may occur in this structure.

Keywords

EN

73.40.-c

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 5
• Pages: 699-705

Dates

published

1991-05

received

1990-05-21

Contributors

author

I.E. Trale

• Physical and Technical Institute, Academy of Sciences of the Byelorussian SSR, Zhodinskaja St. 4, 220730-Minsk, USSR