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1991 | 79 | 5 | 699-705
Article title

MIS-Microstructure with Periodic Field Electrodes. A New Type of Dynamic Superlattice

Authors
Content
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Languages of publication
EN
Abstracts
EN
The electron movement in thin semiconductor layer adjoining interface semiconductor-insulator in metal-insulator-semiconductor (MIS) microstructure with periodic field electrodes is considered. If a voltage of some sufficiently high frequency is applied to such a structure the effect of this high frequency field on a charge carriers in semiconductor is equivalent, in a sense, to the effect of some time-independent effective potential which is a sequence of deep "dynamic" quantum wells, where the charge carriers are localized. It is shown that the electron resonant tunneling may occur in this structure.
Keywords
EN
Publisher

Year
Volume
79
Issue
5
Pages
699-705
Physical description
Dates
published
1991-05
received
1990-05-21
Contributors
author
  • Physical and Technical Institute, Academy of Sciences of the Byelorussian SSR, Zhodinskaja St. 4, 220730-Minsk, USSR
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z511kz
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