MIS-Microstructure with Periodic Field Electrodes. A New Type of Dynamic Superlattice
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The electron movement in thin semiconductor layer adjoining interface semiconductor-insulator in metal-insulator-semiconductor (MIS) microstructure with periodic field electrodes is considered. If a voltage of some sufficiently high frequency is applied to such a structure the effect of this high frequency field on a charge carriers in semiconductor is equivalent, in a sense, to the effect of some time-independent effective potential which is a sequence of deep "dynamic" quantum wells, where the charge carriers are localized. It is shown that the electron resonant tunneling may occur in this structure.
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