Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature

• Authors: J. Krynicki , H. Rzewuski , R. Groetzschel , A. Claverie
• Languages of publication: EN

Abstracts

EN

Amorphization of GaAs implanted with Cd in the dose range of 2 x 10^{13}-1.2 x 10^{14} ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature.

Keywords

EN

61.80.Jh; 61.70.Tm

Discipline

• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 349-353

Dates

published

1991-02

received

1990-08-08

Contributors

author

J. Krynicki

• Instytut Chemii i Techniki Jądrowej, Dorodna 16, Warszawa, Poland

author

H. Rzewuski

• Instytut Chemii i Techniki Jądrowej, Dorodna 16, Warszawa, Poland

author

R. Groetzschel

• Zentralinstitut für Kernforschung Rossendorf/Dresden, Germany

author

A. Claverie

• CEMES-LOE CNRS, 31055 Toulouse, France

Identifiers

DOI

10.12693/APhysPolA.79.349