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1991 | 79 | 2-3 | 349-353
Article title

Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature

Content
Title variants
Languages of publication
EN
Abstracts
EN
Amorphization of GaAs implanted with Cd in the dose range of 2 x 10^{13}-1.2 x 10^{14} ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
349-353
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
author
  • Instytut Chemii i Techniki Jądrowej, Dorodna 16, Warszawa, Poland
author
  • Instytut Chemii i Techniki Jądrowej, Dorodna 16, Warszawa, Poland
  • Zentralinstitut für Kernforschung Rossendorf/Dresden, Germany
author
  • CEMES-LOE CNRS, 31055 Toulouse, France
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z245kz
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