The Pressure Dependence of Transition Metal-Related Levels in GaAs

• Authors: A. Babiński , M. Baj , A. Hennel
• Languages of publication: EN

Abstracts

EN

The hydrostatic pressure coefficients of V^{3+/2+} acceptor level in bulk GaAs and of the 0.48 eV trap (related to Ni^{2+/1+} double acceptor level) in VPE GaAs were measured by means of the DLTS technique. The obtained values are 94 meV/GPa and 196 meV/GPa relative to the bottom of the conduction band. For Ni^{2+/1+} level the strong pressure dependence of the capture cross-section activation energy (60 meV/GPa) was also observed.

Keywords

EN

71.55.Eq; 62.50.+p

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 323-327

Dates

published

1991-02

received

1990-08-08

Contributors

author

A. Babiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Baj

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

A. Hennel

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.79.323