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1991 | 79 | 2-3 | 323-327
Article title

The Pressure Dependence of Transition Metal-Related Levels in GaAs

Content
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Languages of publication
EN
Abstracts
EN
The hydrostatic pressure coefficients of V^{3+/2+} acceptor level in bulk GaAs and of the 0.48 eV trap (related to Ni^{2+/1+} double acceptor level) in VPE GaAs were measured by means of the DLTS technique. The obtained values are 94 meV/GPa and 196 meV/GPa relative to the bottom of the conduction band. For Ni^{2+/1+} level the strong pressure dependence of the capture cross-section activation energy (60 meV/GPa) was also observed.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
323-327
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z239kz
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