Transient Photo-Induced Current Measurements in High Resistivity ZnSe Crystals

• Authors: W. Bała , F. Firszt , D. Dul , Z. Turlo , J. Borkowski
• Languages of publication: EN

Abstracts

EN

Using technique of computerized signal-averaging of photocurrent transient, we have studied the details of deep level states in high resistivity ZnSe crystals. The time resolved spectra of photocurrent and four-gate PICT spectra are presented.

Keywords

EN

72.20.Jv; 72.40.+w

Discipline

• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 295-298

Dates

published

1991-02

received

1990-08-08

Contributors

author

W. Bała

• Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

author

F. Firszt

• Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

author

D. Dul

• Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

author

Z. Turlo

• Laboratory of Astrophysics, Polish Academy of Sciences, Chopina 12/18, 87-100 Toruń, Poland

author

J. Borkowski

• Laboratory of Astrophysics, Polish Academy of Sciences, Chopina 12/18, 87-100 Toruń, Poland

Identifiers

DOI

10.12693/APhysPolA.79.295