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1991 | 79 | 2-3 | 287-290
Article title

Temperature and Composition Dependence of Photovoltaic Spectra of Pb_{1-x}Mn_{x}Se Diodes

Content
Title variants
Languages of publication
EN
Abstracts
EN
Photovoltaic spectra of Pb_{1-x}Mn_{x}Se homojunctions have been measured in the infrared spectral region within the temperature range 15-300 K. The junctions have been formed by cadmium diffusion into the p-type Pb_{1-x}Mn_{x}Se crystals with manganese content 0 ≤ x ≤ 0.08. From the positions of the photovoltaic maxima the energy band gap of the diode material has been determined. A phenomenological expression describing the energy band gap of Pb_{1-x}Mn_{x}Se as a function of temperature and crystal composition has been proposed. In diodes containing high manganese content x = 0.06 and x = 0.08 a second photovoltaic maximum caused by indirect optical transitions between the main conduction band and the secondary valence band located along the ∑-axis of the Brillouin zone has been observed.
Keywords
EN
Year
Volume
79
Issue
2-3
Pages
287-290
Physical description
Dates
published
1991-02
received
1990-08-08
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z230kz
Identifiers
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